| PART |
Description |
Maker |
| KM68U4000C |
512K x8 bit Low Power and Low Voltage CMOS Static RAM(512K x8位低功耗低电压CMOS 静RAM) 12k x8位低功耗和低电压的CMOS静态RAM（为512k x8位低功耗低电压的CMOS静态RAM）的
|
Samsung Semiconductor Co., Ltd.
|
| K6F8016V3A K6F8016V3A-F K6F8016V3A-TF55 K6F8016V3A |
512K X 16 STANDARD SRAM, 55 ns, PDSO44
From old datasheet system
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| CMP0817BA0-F70I CMP0817BA0-I |
512K x 16 bit Super Low Power and Low Voltage Full CMOS RAM
|
FIDELIX
|
| EM680FU16 |
512K x16 bit Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Solutions Inc
|
| K6F8016T6C K6F8016T6C-FF55 K6F8016T6C-FF70 |
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K6F4008U2G-F K6F4008U2G |
512K x 8 bit Super Low Power and Low Voltage Full CMOS Static RAM 12k × 8位超低功耗和低电压的CMOS静态RAM
|
Samsung Semiconductor Co., Ltd.
Samsung Electronic
|
| BS616LV8022BI BS616LV8022 BS616LV8022BC |
Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable
|
BSI[Brilliance Semiconductor]
|
| BS616LV8023BC BS616LV8023BI BS616LV8023 |
Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable
|
BSI[Brilliance Semiconductor]
|
| 89LV1632RPQK-30 |
16 Megabit (512K x 32-Bit) Low Voltage MCM SRAM 512K X 32 MULTI DEVICE SRAM MODULE, 30 ns, CQFP68
16 Megabit (512K x 32-Bit) Low Voltage MCM SRAM 16兆位12k × 32的位）低压亿立方米的SRAM
|
Maxwell Technologies, Inc
|
| BS616LV4021 BS616LV4021BC BS616LV4021BI BS616LV402 |
Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable
|
BSI[Brilliance Semiconductor]
|
